Japanese industry technology is integrated institute (produce put together to grind) development of group of development of motherboard of crystallization of sheet of diamond research center went circle of brilliant of diamond of large odd crystallization to make a technology. This technology union used two kinds of technologies: Make sheet of laminose shape diamond crystallize directly by seed brilliant " direct brilliant circle changes a technology " , and grow through ordinal change direction, undertake gas phase deposit is synthesized repeatedly (CVD) implementation finish brilliant is large the technology that change. Diamond has conductivity of tall hardness, high fever, wider light to pass through wavelengh frequency band and belt the useful content sex such as rate of report of unoccupied place, low interpose and excellent chemical stability. Accordingly, electronic industry hope makes a function exceed silicon with its (Si) kind reach carborundum (SiC) kind component. Nevertheless, can the technology of circle of brilliant of diamond of mass-produced large odd crystallization however all the time not be able to establish. The engineering technology before this arrives to get board shape diamond, will large sheet is normally crystal (brilliant ingot) slice, this is handled, form cut seam the treatment loss that makes an appointment with 1/3 with respect to meeting generation, and have the reverse side even after brilliant circle is machined abrade wait for complex process, these all are to conduce to solid reality using the mass-produced barrier that convert. Produce put together to grind to solve afore-mentioned tasks, begin to considering to use law of microwave plasma CVD to have complex method to diamond of large odd crystallization all the time from 2003. The synthetic respect that ends to already was diamond of crystallization of 1 carat sheet in size at present scored a success. This research discovers, through undertaking to exterior temperature around 1200 ℃ nicety is controlled, accurate control reachs the content of the nitrogen that adds in the reaction gas that hydrogen forms to methane, controallable the unusually crystal growth with different position. Additional, produce put together to grind express, lay chief condition crystally through optimizing diamond, can come true 5 times faster than before the synthesis of the hour of 50 μ M/ of above. Applied this method this to undertake iteration growth. The characteristic of this technology is can with (100) the face continues to grow for unripe long range. Make have at first (100) the seed brilliant of the face shows strong record to grow, it is symmetrically then (010) the flank of the face undertakes abrade, crystallize is in should grow on the face, next again crystallize is in (100) grow on the face, thereby crystallize gradually large change. Use this method to be able to be made 6. The diamond sheet of 6 carat is crystal. In addition, produce put together to ground to still develop the direct brilliant circle that can reduce loss, cut to give board state to change a technology. Direct brilliant circle changes a technology to be able to fall to become brilliant circular cut board state in the circumstance that wastes seed brilliant scarcely, produce the diamond of brilliant round shape that gave 10mm square this with good repeatability. Before direct brilliant circle changes a technology to grow in gas phase deposit, beforehand infuse crystallizes as the sheet of seed brilliant, be in next the surface lower part guides blemish layer. After gas phase deposit grows, blemish layer can form black lead construction, because this can learn a gender with electrification,etch purify. This method is met when cut seed brilliant brilliant of loss share seed, nevertheless its are used up it is only under 1 μ M. Can use seed any crystalline substance repeatedly, cut the brilliant circle that leave to still can be used as seed brilliant. Need to make brilliant ingot no longer so, and also do not need back the growth of abrade part. This relation as a result of use CVD device, makes brilliant circle has 10mm square only greatly most, do not cross the possibility that uses to enlarge diamond semiconductor component, will strive to make the brilliant circle that gives 1 inch of above henceforth. Will devote oneself to to produce device to come true to be changed equably through improving plasma henceforth reach large area to change, adopt guide the spot observes the step such as the technology will improve crystallization quality. CNC Milling